ECR plasma engraving system / for silicon / wafer / process
M-8000 Series
INO Group

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Technique:
ECR plasma
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Applications:
for silicon, wafer, process
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X travel:
300 mm
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Y travel:
300 mm
The M-8000 series has been optimized for sturdy mask and silicon etching for 32 nm and beyond as its operation has been enhanced coming up with new material etch process like high-k dielectric or metal gate via JDPs along with the supplier of material and makers of the device.
This system can easily be controlled and CD uniformity inside a chamber that merge the ECR plasma source, rapid wafer temperature control and high vacuum exhaust technology. The applicable wafer diameter is 300mm.